Home / Single, Pre-Biased Bipolar Transistors / RN2105MFV,L3F

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RN2105MFV,L3F

Toshiba Semiconductor and Storage

Manufacturer Part #:

RN2105MFV,L3F

Manufacturer:

Toshiba Semiconductor and Storage

Package:

VESM

Data Code:

Datasheet:

Description:

TRANS PREBIAS PNP 50V 0.1A VESM

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In Stock : Please Inquiry Share

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Specifications

Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
Power - Max	150 mW
Mounting Type	Surface Mount
Package / Case	SOT-723
Product Status	Active
Transistor Type	PNP - Pre-Biased
Base Product Number	RN2105
Resistor - Base (R1)	2.2 kOhms
Supplier Device Package	VESM
Resistor - Emitter Base (R2)	47 kOhms
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Current - Collector (Ic) (Max)	100 mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)	50 V

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